2012 CE
22 nm FinFET transistors in high-volume production
Materials & manufacturing · Semiconductores y fabricación de precisión
Intel reported that its 22 nm three-dimensional tri-gate transistors, a FinFET form, entered high-volume production in 2012. This marks one company’s industrial process transition, not simultaneous FinFET adoption across the whole industry or a single measure of every chip’s performance.
Precision, calendar, and review
- Start
- year · no uncertainty qualifier in this record
- Calendar and convention
- Historical-era years; the source calendar is not identified. No conversion of days is assumed.
- Year zero
- The scale goes from 1 BCE to 1 CE without year zero. Changing era names changes labels only.
- Documentary review
- Date not recorded
Reading the date: point event.
Sources
- www.intel.com (opens in a new tab)
Source provenance and scope
- Publication date
- Pending verification: the source could not be accessed
- Bibliographic date checked
- 2026-09-23
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This record is an editorial synthesis. Consult the sources to check claims and their limits. Chronological relationships alone do not establish causation.